Existence and approximation of equilibrium configurations for epitaxially strained crystalline films

13 Novembre 2019
Versione stampabile

 

Luogo: Dipartimento di Matematica, via Sommarive, 14 - Povo (TN) - Sala Seminari "-1"
Ore: 14:30

Relatore:

  • Vito Crismale (École Polytechnique, France)

Abstract: In the realization of electronic device structures, thin layers of highly strained hetero-systems such as InGaAs/GaAs or SiGe/Si are deposited onto a substrate with different elastic stiffness. This process is said epitaxial growth of the film on the substrate. It is governed by the competition of two forms of energy, the bulk elastic energy and the surface energy, proportional to the free surface area. I will present a work with M. Friedrich (University of Münster), in which we prove existence and approximation of equilibrium configurations for the corresponding energy introduced by Bonnetier and Chambolle in 2002, in any dimension and without any a priori regularity assumption on the displacement of the thin film. The analysis extends the available 2-dimensional results.

Referente: Marco Bonacini